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Transistors with built-in Resistor
UNR421X Series (UN421x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits Features
* Costs can be reduced through downsizing of the equipment and reduction of the number of parts * New S type package, allowing supply with the radial taping
0.75 max.
4.00.2 (0.8) 3.00.2
2.00.2
Resistance by Part Number
* * * * * * * * * * * * * * * UNR4210 UNR4211 UNR4212 UNR4213 UNR4214 UNR4215 UNR4216 UNR4217 UNR4218 UNR4219 UNR421D UNR421E UNR421F UNR421K UNR421L (UN4210) (UN4211) (UN4212) (UN4213) (UN4214) (UN4215) (UN4216) (UN4217) (UN4218) (UN4219) (UN421D) (UN421E) (UN421F) (UN421K) (UN421L) (R1) 47 k 10 k 22 k 47 k 10 k 10 k 4.7 k 22 k 0.51 k 1 k 47 k 47 k 4.7 k 10 k 4.7 k (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k 10 k 4.7 k 4.7 k
0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1
15.60.5
(0.8)
7.6 2 3
1
1: Emitter 2: Collector 3: Base NS-B1 Package
Internal Connection
R1 B R2 E C
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 300 150 -55 to +150 Unit V V mA mW C C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003 SJH00020BED
1
UNR421X Series
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current UNR4210/4215/4216/4217 UNR4213 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 0.1 0.5 0.01 0.1 0.2 0.5 1.0 1.5 2.0 hFE VCE = 10 V, IC = 5 mA 20 30 35 60 80 160 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k VCC = 5 V, VB = 10 V, RL = 1 k VCC = 5 V, VB = 6 V, RL = 1 k fT R1 VCB = 10 V, IE = -2 mA, f = 200 MHz -30% 150 0.51 1.0 4.7 10 22 47 R1/R2 0.08 0.17 0.37 0.8 1.70 1.70 3.7 0.10 0.21 0.47 1.0 2.13 2.14 4.7 0.12 0.25 0.57 1.2 2.60 2.60 5.7 +30% MHz k 4.9 0.2 460 0.25 V V V Typ Max Unit V V A A mA
(Collector open) UNR4212/4214/421D/421E UNR4211 UNR421F/421K UNR4219 UNR4218/421L Forward current UNR4218/421K/421L transfer ratio UNR4219/421D/421F UNR4211 UNR4212/421E UNR4213/4214 UNR4210 */4215 */4216 */ 4217 * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR4213/421K UNR421D UNR421E Transition frequency Input resistance UNR4218 UNR4219 UNR4216/421F/421L UNR4211/4214/4215/421K UNR4212/4217 UNR4210/4213/421D/421E Resistance ratio UNR4218/4219 UNR4214 UNR421F UNR4211/4212/4213/421L UNR421K UNR421E UNR421D
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460
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Common characteristics chart PT Ta
400
Total power dissipation PT (mW)
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of UNR4210 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 400
hFE IC
VCE = 10 V
60
IB = 1.0 mA 0.9 mA 0.8 mA
Forward current transfer ratio hFE
50
Collector current IC (mA)
10
300 Ta = 75C 25C 200 -25C 100
40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA
30
0.3 mA
1 Ta = 75C 25C 0.1 -25C 0.01 0.1
20
10
0
0 1 10 100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
Input voltage VIN (V)
103
10
102
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR421X Series
Characteristics charts of UNR4211 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
160
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA
Forward current transfer ratio hFE
10
300
Ta = 75C
80
0.3 mA
1 25C 0.1 -25C
200 25C 100 -25C
0.2 mA 40
Ta = 75C
0.1 mA 0 0 2 4 6 8 10 12
0.01 0.1
0
1 10 100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR4212 IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 120
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 400
hFE IC
VCE = 10 V
160
Collector current IC (mA)
0.7 mA 0.6 mA 0.5 mA 0.4 mA
10
Forward current transfer ratio hFE
300
Ta = 75C
80 0.3 mA
1 Ta = 75C
200 25C -25C
25C 0.1 -25C
40
0.2 mA
100
0.1 mA 0 0 2 4 6 8 10 12
0.01 0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
4
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UNR421X Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
Output current IO (A)
103
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.01
0.1 1 10 100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR4213 IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 400
hFE IC
VCE = 10 V
160
Forward current transfer ratio hFE
Collector current IC (mA)
120
10
300
Ta = 75C 25C -25C
1
200
40
0.2 mA
25C 0.1 -25C 0.01 0.1
Ta = 75C
100
0.1 mA 0
0
2
4
6
8
10
12
1
10
100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
4
3
Output current IO (A)
Input voltage VIN (V)
103
10
102
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR421X Series
Characteristics charts of UNR4214 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 80 0.4 mA 0.3 mA 40 100
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
120
10
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta = 75C 200 25C -25C 100
1
Ta = 75C 0.1 -25C 0.01 0.1 1 10 100 25C
0.2 mA 0.1 mA
0
0
2
4
6
8
10
12
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR4215 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 400
hFE IC
VCE = 10 V
160
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA
10
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta = 75C
80
1
200 25C -25C 100
Ta = 75C 0.1 -25C 0.01 0.1 1 10 100 25C
40
0
0
2
4
6
8
10
12
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
6
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UNR421X Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C 104
IO VIN
VO = 5 V Ta = 25C 100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR4216 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA
VCE(sat) IC
100 IC / IB = 10
400
hFE IC
VCE = 10 V
Forward current transfer ratio hFE
Ta = 75C 300 25C -25C 200
Collector current IC (mA)
120
10
80
1
Ta = 75C 0.1 25C
40
100
0.1 mA
0 0 2 4 6 8 10 12
-25C 0.01 0.1
0
1
10
100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR421X Series
Characteristics charts of UNR4217 IC VCE
a IB =1 .0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA
VCE(sat) IC
T = 25C
hFE IC
400 VCE = 10 V
Forward current transfer ratio hFE
100
Collector-emitter saturation voltage VCE(sat) (V)
120
100
IC / IB = 10
Collector current IC (mA)
10
300
80 0.4 mA 0.3 mA 0.2 mA
60
1
Ta = 75C
200
Ta = 75C 25C
40
25C 0.1
100
-25C
20 0 0 2 4 6 8
0.1 mA
-25C 0.01 0.1
0
10
12
1
10
100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
103
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR4218 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 160
hFE IC
VCE = 10 V
240
Collector current IC (mA)
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA
Forward current transfer ratio hFE
200
10
120
Ta = 75C 80 25C -25C 40
120 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0 0.1 mA 0 2 4 6 8 10 12
1 Ta = 75C
80
0.1
25C
40
-25C 0.01 0.1 0 1 10 100 1 10 100 1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
8
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UNR421X Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR4219 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
160 VCE = 10 V
240
200
Collector current IC (mA)
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
Forward current transfer ratio hFE
10
120
120 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
1 Ta = 75C 25C 0.1
80
Ta = 75C 25C -25C
80
40
40
-25C 0.01 0.1
0
1 10 100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6
IO VIN
f = 1 MHz IE = 0 Ta = 25C
104 VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
0.1
1
0
0.1
1
10
100
1 0.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR421X Series
Characteristics charts of UNR421D IC VCE
Ta = 25C 0.9 mA 0.8 mA 0.5 mA 0.7 mA 0.4 mA 25 0.6 mA 0.3 mA IB = 1.0 mA 20
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
160 VCE = 10 V Ta = 75C 25C -25C 120
30
10
15 0.2 mA 10 0.1 mA
1
Forward current transfer ratio hFE
100
Collector current IC (mA)
80
25C 0.1 -25C 0.01 0.1
Ta = 75C
40
5
0
0
2
4
6
8
10
12
1
10
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
2.0 2.5 3.0 3.5 4.0
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 1.5
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR421E IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
60 IB = 1.0 mA 0.7 mA Ta = 25C 0.9 mA 0.6 mA 0.8 mA 100
VCE(sat) IC
IC / IB = 10
160
hFE IC
VCE = 10 V
50
Forward current transfer ratio hFE
Collector current IC (mA)
10
120
Ta = 75C 25C -25C
40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA
30
1
Ta = 75C
80
20
25C 0.1
40
10
-25C 0.01 0.1
0
0
0
2
4
6
8
10
12
1
10
100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
10
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UNR421X Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
2.0 2.5 3.0 3.5 4.0
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 1.5
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR421F IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
160
hFE IC
VCE = 10 V
240
200
Forward current transfer ratio hFE
Collector current IC (mA)
160
0.9 mA 0.8 mA 0.7 mA 0.6 mA IB = 1.0 mA 0.5 mA 0.4 mA 0.3 mA
10
120
Ta = 75C 80 25C -25C
120
1
Ta = 75C
80
25C 0.1
40
40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
-25C 0.01 0.1
0
1
10
100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR421X Series
Characteristics charts of UNR421K IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
VCE(sat) IC
100 IC / IB = 10
240
hFE IC
VCE = 10 V
10
160 IB = 1.2 mA 1.0 mA 0.8 mA 80 0.6 mA 0.4 mA 0.2 mA 0 0 2 4 6 8 10 12
Forward current transfer ratio hFE
200
200
Collector current IC (mA)
160 Ta = 75C 120 25C 80 -25C 40
120
1
25C 0.1
Ta = 75C -25C
40
0.01
1
10
100
1 000
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
4
3
Input voltage VIN (V)
1 10 100
10
1
2
0.1
1
0
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR421L IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
VCE(sat) IC
100 IC / IB = 10 240
hFE IC
VCE = 10 V
200
10
Forward current transfer ratio hFE
200 Ta = 75C
Collector current IC (mA)
160 IB = 1.0 mA 0.8 mA 0.6 mA 80 0.4 mA
160
120
1 Ta = 75C 0.1 25C -25C 0.01
120
25C -25C
80
40 0.2 mA 0 0 2 4 6 8 10 12
40
0 1 10 100 1 000
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
12
SJH00020BED
UNR421X Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
4
Input voltage VIN (V)
10
3
1
2
0.1
1
0
1
10
100
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Output current IO (mA)
SJH00020BED
13
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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